Study of GaN:Eu3+ Thin Films Deposited by Metallorganic Vapor-Phase Epitaxy
نویسندگان
چکیده
Using metallorganic vapor-phase epitaxy, thin films of gallium nitride activated by Eu3+ GaN:Eu3+ have been deposited on sapphire substrates at atmospheric pressure. Luminescence from Eu3+ ions in GaN has been investigated using photoluminescence PL and PL excitation spectroscopy. Experimental results show that Eu3+ ions are excited via energy transfer from the host. Analyses of the observed emission and excitation spectra indicate occupancy of multiple sites in the nitride lattice. Using a pulsed laser source, variation of emission intensity with increasing excitation intensity has also been examined. The possibility of emission saturation at high excitation intensity is discussed from the perspective of application in light-emitting diode sources. © 2008 The Electrochemical Society. DOI: 10.1149/1.2969910 All rights reserved.
منابع مشابه
Preparation of epitaxial PbTiO 3 thin films by metalorganic vapor phase epitaxy under reduced pressure
In this study PbTiO 3 thin films were deposited using metalorganic vapor phase epitaxy (MOVPE). Titanium-isopropoxide and tetraethyl-lead were used as the Ti and Pb precursors, and 0 2 was the oxidizing gas. A wide range of conditions for preparing high quality PbTiO 3 thin film were investigated. The epitaxial PbTiO 3 thin films were grown on (001) SrTiO 3 substrates at a growth temperature of...
متن کاملX-RAY DIFFRACTION CHARACTERIZATION OF MOVPE ZnSe FILMS DEPOSITED ON (100) GaAs USING CONVENTIONAL AND HIGH-RESOLUTION DIFFRACTOMETERS
ZnSe-based heterostructures grown on GaAs substrates have been investigated for use in pindiode LED applications. ZnSe has a large band gap, 2.76 eV, as well as a near lattice match to GaAs, 5.6688 Å vs. 5.6538 Å, respectively. In this study a metallorganic vapor phase epitaxy (MOVPE) deposition technique is used to produce doped and undoped thin films of ZnSe on (100) GaAs. Understanding the e...
متن کاملEffect of NH3 on Film Properties of MOCVD Tungsten Nitride from Cl4„CH3CN...W„N iPr..
Thin films of tungsten nitride were deposited from Cl4(CH3CN!W~N Pr) by metallorganic chemical vapor deposition ~MOCVD! in the presence and absence of ammonia (NH3) coreactant. Films were analyzed by X-ray diffraction, Auger electron spectroscopy, and X-ray photoelectron spectroscopy ~XPS!. Films grown with NH3 had increased nitrogen levels and decreased carbon and oxygen levels relative to fil...
متن کاملAtomic Structure Determination of Ba4Ti5O10 and Ba4Ti4O11 in Epitaxial Barium Titanate Nanodomains Using HRTEM and Electron Diffraction
Perovskite BaTiO3 thin films have a wide range of applications for advanced devices. Especially, epitaxial BaTiO3 thin films are highly desirable for these advanced applications. So far, such epitaxial BaTiO3 films have been successfully fabricated on different single-crystal substrates using various deposition techniques including RF magnetron sputtering, molecular beam epitaxy, metallorganic ...
متن کاملThickness Dependence of Sensitivity in Thin Film Tin Oxide Gas Sensors Deposited by Vapor Pyrolysis
Transparent SnO2 thin films were deposited on porcelain substrates using a chemical vapor deposition technique based on the hydrolysis of SnCl4 at elevated temperatures. A reduced pressure self-contained evaporation chamber was designed for the process where the pyrolysis of SnCl4 at the presence of water vapor was carried out. Resistive gas sensors were fabricated by providing ohmic contacts o...
متن کامل